Session 18.3:
A Novel Hybrid High-Speed and Low Power Antiferroelectric HSO Boosted Charge Trap Memory for High-Density Storage
Tarek Ali, Konstantin Mertens et al. (Fraunhofer IPMS - Center Nanoelectronic Technologies)
We report on antiferroelectric (AFE) hybrid charge trap (CT) memory with amplified tunnel oxide field via dynamic AFE hysteresis dipole switching. Memory window (4.5V), switching speed (<1μs), 10 years retention, and 105 endurance are reported. The HSO/HZO with tailored (FE,AFE) hysteresis are explored for low power and high-speed-boosted CT memory.
Session 26.3:
Energy Harvesting in the Back-End of Line with CMOS Compatible Ferroelectric Hafnium Oxide
Clemens Mart, Sukhrob Abdulazhanov, Malte Czernohorsky et al. (Fraunhofer IPMS - Center Nanoelectronic Technologies)
We demonstrate the feasibility of thermal energy recovery in the back end of line employing CMOS-compatible ferroelectric hafnium oxide. Our energy harvesting approach exceeds the efficiency limit of commonly-used thermoelectric materials, without using a heat switch. The abundance in CMOS manufacturing make HfO2-based ferroelectrics promising candidates for integrated energy harvesting.
Session 29.2:
Ultra Low Power Flexible Precision FeFET based Analog In-memory Computing
Taha Soliman, Franz Müller et al. (Fraunhofer IPMS)
This paper presents an efficient crossbar design and implementation intended for analog compute-in-memory (ACiM) acceleration of artificial neural networks based on FeFET technology. The mixed signal blocks reduce the device-to-device variation and offer low area, low power and high throughput. The ACiM achieves a record peak performance of 13714 TOPS/W.
Session 29.3:
A Scalable Design of Multi-Bit Ferroelectric Content Addressable Memory for Data-Centric Computing,
Chao Li, Franz Müller, Tarek Ali et al. (Fraunhofer IPMS - Center Nanoelectronic Technologies)
We propose a novel scalable and ultra-compact multi-bit CAM design based on 2FeFET1T structure. Successful functionality verification of a CAM cell and array on 2-bit FeFET and statistical verification of sufficient sensing margin for an 1x32 CAM array are demonstrated. Density and performance are greatly improved compared with SRAM CAM.
Fraunhofer Institute for Photonic Microsystems