Project MesSi develops silicon-based photodiodes for the near-infrared range / 2024
Photodiodes based on cost-effective silicon expand the usable range in measurement technologies
Image sensors and their core component, the photodiode, are indispensable in numerous applications, whether in process, measurement, automotive or safety technology. In the near-infrared range, which is particularly important for many analytical applications, silicon-based photodiodes do not yet offer sufficient sensitivity. Therefore, other materials are used, but they are expensive and sometimes harmful to the environment. In a new project at the Fraunhofer Institute for Photonic Microsystems IPMS, sensitive silicon-based photodiodes, which are more cost-efficient in production, are now being developed for the first time. The Federal Ministry of Education and Research in Germany (BMBF) funds the MesSi project with 566,000 euros for a period of three years.
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