FerroSAFE - Field-induced crystallization for robust safety applications

Whether digital electricity meters or speedometers: If consumption or mileage are read out electronically, the transmitted data should not be manipulable. Researchers at the Fraunhofer Institute for Photonic Microsystems IPMS have developed a solution that makes it possible to configure the function of corresponding security elements after production and thus protect them reliably and cost-effectively in multiple dimensions.

The use of the field-induced crystallization property (FINK) of doped hafnium oxide enables the electrical functionalization after the completion of chips with the so-called FerroSAFE technology. This innovative method allows the properties of components, from purely capacitive to ferroelectric, to be changed in a targeted and permanent manner. This enables tamper-proof functionalization of electronic components after production and paves the way for a wide range of applications, particularly in the field of data and infrastructure system security.

In order to validate the effectiveness of the FerroSAFE function, it is to be integrated into logic circuits of a conventional chip technology as part of this project and also verified using a multi-dimensionally protected FerroSAFE data memory. A test setup with a uniquely configurable tamper-proof memory for meter data completes this validation. FerroSAFE technology not only offers convincing development possibilities for highly secure and at the same time cost-effective semiconductor solutions. Thanks to the compatibility of the hafnium oxide used with existing semiconductor manufacturing technologies, there is great potential for rapid transfer to industrial applications.