Resistive Random Access Memory (RRAM)

© Fraunhofer IPMS
RRAM stack integration
© Fraunhofer IPMS
Bitcell & Array Characterization

Specifications

  • CMOS-compatible RRAM stacks
  • 300 mm wafer process technology
  • Scalable down to advanced technology nodes
  • Very energy-efficient thanks to low voltage switching and read operation

 

Our R&D-Services

  • Research and stack solutions for oxide-based filament switching
  • Available test-routes for bitcell demonstration
  • Comprehensive integration, design and testing solutions from bitcell to full RRAM array