300 mm Wafer Services

For high volume production (HVM) of semiconductor devices such as microprocessors, every single process step is of interest for evaluation and optimization. Test vehicles and test wafers are essential for testing developments and new materials under production conditions. Test wafers enable scientists to react quickly on process changes and transfer chemicals or processes from „Lab to Fab“ for HVM.

The Screening Fab at Fraunhofer IPMS - Center Nanoelectronic Technologies (CNT) is intensively researching the production and optimization of semiconductor devices and offers a multitude of advantages.

Blank Wafer

Silicon based Layer

SiO2 (thermal or chemical formed oxide)
Organo silicate glass (SiCOH/ULK) [porous]
SiGe
Doped amorphous Si and poly Si (P, B)

Metals

PVD: Ta(N), Ti(N), Cu
CVD: Co
ECD: Co, Cu

ALD based Oxides and Nitrides

Al₂O₃
HfO2 (doped)
ZrO₂
More materials upon request

Structured Wafer

Test Structures for various Processes at ≤ 28 nm Technology Node

CMP | Plating | Cleaning
Thin films | STI

Test Structures for functional Layers

Memory applications
MIS/MIM structures

Custom Layout Implementation / E-Beam Lithography Nanopatterning

Complementary Mix & Match
Small volume series
more information here!

Test Structures for BEOL / Wafel Level Packaging (IZM-ASSID)

TSV Test Wafers (via middle, via last)
Si Interposer with Cu-TSV
Fine pitch flip Interconnects
Teships for chip-to-wafer / chip-to-chip / chip-to-substrate bonding

Metrology

Test wafers are verified in our metrology system park for a fast realization of further qualification steps on site.

© Fraunhofer IPMS
Picture of an EFTEM (Energy filtered transmission electron microscopy)

Layer thickness and uniformity (4-point probing, ellipsometry, XRR, high res. profi lometry)
Film morphology and structure (AFM [3D], XRD, surface inspection, SEM, TEM, porosimetry)
Chemical composition & contamination (ToF-SIMS, XPS, TXRF, EELS, VPD-ICP-MS)
Patterned defect inspection
Electrochemical monitoring of electrolyte solutions and additives (CVS, LP, EIS, etc.)
Electrical characterization of functional layers and layer stacks (Semi-automatic probing)